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Vishay Telefunken - Silicon Epitaxial Planar Dual Capacitance Diode

Numéro de référence BB824
Description Silicon Epitaxial Planar Dual Capacitance Diode
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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BB824 fiche technique
BB824
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode
D High capacitance ratio
Applications
Tuning of separate resonant circuits, push–pull circuits
in FM range, for car radios
94 8550
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Type
Symbol
VRRM
VR
IF
Tj
Tstg
Value
20
18
50
125
–55...+150
Unit
V
V
mA
°C
°C
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Type Symbol Min Typ Max
Reverse current
Diode capacitance 1)
VR=16V
VR=16V, Tj=60°C
VR=2V
VR=8V
Capacitance ratio
Series resistance
VR=2V,8V, f=1MHz
VR=2V, f=100MHz
Group 2
Group 3
Group 2
Group 3
IR
IR
CD
CD
CD
CD
CD2/ CD8
rs
42.5
43.7
17.5
18.0
2.25
20
200
43.8
45
19.2
19.8
2.45
0.5
1) In the reverse voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%.
Unit
nA
nA
pF
pF
pF
pF
W
Document Number 85556
Rev. 3, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (3)

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