(PDF) BB814 Datasheet - Silicon Epitaxial Planar Dual Capacitance Diode

Número de pieza	BB814
Descripción	Silicon Epitaxial Planar Dual Capacitance Diode
Fabricantes	Vishay Telefunken
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No Preview Available ! BB814 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125 –55...+150 Unit V V mA °C °C Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Reverse current Diode capacitance 1) VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance VR=2V,8V, f=1MHz CD=38pF, f=100MHz Group 1 Group 2 Group 1 Group 2 IR IR CD CD CD CD CD2/ CD8 rs 43 44.5 19.1 19.75 2.05 20 200 45 46.5 21.95 22.70 2.25 0.5 1) In the reverse voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%. Unit nA nA pF pF pF pF W Document Number 85555 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 1 (3) 1 page

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PDF BB814 Data sheet ( Hoja de datos )