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Infineon Technologies AG - Silicon Variable Capacitance Diodes

Numéro de référence BB639
Description Silicon Variable Capacitance Diodes
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BB639 fiche technique
BB639/BB659...
Silicon Variable Capacitance Diodes
 For tuning of extended frequency band
in VHF TV / VTR tuners
 High capactance ratio
 Low series inductance
 Low series resistance
 Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB639
BB659
12
Type
BB639
BB659
Package
SOD323
SCD80
Configuration
single
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
( R  5k )
VR
VRM
Forward current
Operating temperature range
Storage temperature
IF
Top
Tstg
LS (nH) Marking
1.8 yellow S
0.6 DE
Value
30
35
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 Nov-07-2002

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