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Datasheet BB565-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


BB5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BB501Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to
Hitachi
Hitachi		amplifier
2BB501Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to
Hitachi
Hitachi		amplifier
3BB501CBuild in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to
Hitachi
Hitachi		amplifier
4BB501MBuild in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to
Hitachi
Hitachi		amplifier
5BB502Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD
Hitachi
Hitachi		amplifier
6BB502Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD
Hitachi
Hitachi		amplifier
7BB502CBuild in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD
Hitachi
Hitachi		amplifier



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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