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PDF BB305M Data sheet ( Hoja de datos )
| Número de pieza | BB305M | |
| Descripción | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BB305M (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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BB305M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-607C (Z)
4th. Edition
May 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Superior cross modulation characteristics.
• High gain; (PG = 28 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
Note: 1. Marking is “EW–”.
2. BB305M is individual type number of HITACHI BBFET.
1 page  
Maximum Channel Power
Dissipation Curve
200
150
100
50
0 50 100 150 200
Ambient Temperature Ta (°C)
BB305M
Typical Output Characteristics
25
VG2S = 4 V @
V G1= VDS
20
15
10
5
1111858206002800kkkkkkWWWWWW
R G = 220 k W
0 1 2345
Drain to Source Voltage VDS (V)
Drain Current vs.
Gate2 to Source Voltage
25
V DS = VG1 = 5 V
47 k W
20 56 k W
68 k W
15 82 k W
100 k W
10 120 k W
150 k W
180 k W
5 R G = 220 k W
0 0.8 1.6 2.4 3.2 4.0
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate1 Voltage
20
V DS = 5 V
R G = 68 k W
16
12 4 V
3V
8
2V
4
VG2S = 1 V
0 1 23 45
Gate1 Voltage VG1 (V)
Å@
5
5 Page 
Package Dimensions
0.4
+
–
0.1
0.05
3
2.8
+
–
0.3
0.1
1.9
0.95 0.95
2
0.4
+
–
0.1
0.05
4
0.4
+
–
0.1
0.05
1
0.95 0.85
1.8
0.6
+
–
0.1
0.05
0.16
+ 0.1
– 0.06
0 ~ 0.1
BB305M
Unit: mm
Hitachi Code
EIAJ
JEDEC
MPAK–4
SC–61AA
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11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BB305M.PDF ] | |
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