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PDF BB305C Data sheet ( Hoja de datos )
| Número de pieza | BB305C | |
| Descripción | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BB305C (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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BB305C
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-608C (Z)
4th. Edition
May 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Superior cross modulation characteristics.
• High gain; (PG = 28 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5 V to 9 V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
Note: 1. Marking is “EW–”.
2. BB305C is individual type number of HITACHI BBFET.
1 page  
Maximum Channel Power
Dissipation Curve
200
150
100
50
0 50 100 150 200
Ambient Temperature Ta (¡C)
BB305C
Typical Output Characteristics
25
VG2S = 4 V
V G1= VDS
20
15
10
5
68
82
100
111852000
kΩ
kΩ
kΩ
kΩ
k
k
Ω
Ω
R G = 220 k Ω
0 1 2345
Drain to Source Voltage VDS (V)
Drain Current vs.
Gate2 to Source Voltage
25
V DS = VG1 = 5 V
47 k Ω
20 56 k Ω
68 k Ω
15 82 k Ω
100 k Ω
10 120 k Ω
150 k Ω
180 k Ω
5 R G = 220 k Ω
0 0.8 1.6 2.4 3.2 4.0
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate1 Voltage
20
V DS = 5 V
R G = 68 k Ω
16
12 4 V
3V
8
2V
4
VG2S = 1 V
0 1 23 45
Gate1 Voltage VG1 (V)
5
5 Page 
Package Dimensions
0.3
+ 0.1
— 0.05
3
2.0 –0.2
1.3
0.65 0.65
2
0.3
+ 0.1
— 0.05
4
0.3
+ 0.1
— 0.05
1
0.65 0.6
1.25
0.4
+ 0.1
— 0.05
0.16
+ 0.1
— 0.06
0 ~ 0.1
BB305C
Unit: mm
Hitahi Code CMPAK-4
EIAJ
SC-82AB
JEDEC
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BB305C.PDF ] | |
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