(PDF) BB301C Datasheet - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Número de pieza	BB301C
Descripción	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Fabricantes	Hitachi
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No Preview Available ! BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 1 page Maximum Channel Power Dissipation Curve 200 150 100 50 0 50 100 150 200 Ambient Temperature Ta (°C) Drain Current vs. Gate2 to Source Voltage 25 68 k Ω 20 82 k Ω 15 100 k Ω 120 k Ω 10 150 k Ω 180 k Ω 5 R G = 220 k Ω VDS = VG1 = 5 V 0 1 2345 Gate2 to Source Voltage VG2S (V) BB301C Typical Output Characteristics 30 VG2S = 4 V 25 VG1 = VDS 20 15 10 5 1118102285000k0kkΩkkΩΩΩΩ R G = 220 k Ω 0 1 2345 Drain to Source Voltage VDS (V) Drain Current vs. Gate1 Voltage 20 VDS = 5 V RG = 82 kΩ 16 12 8 2V 4 VG2S = 1 V 0 1 23 45 Gate1 Voltage VG1 (V) 5 5 Page

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PDF BB301C Data sheet ( Hoja de datos )