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Hitachi - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Numéro de référence BB101C
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Fabricant Hitachi 
Logo Hitachi 





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BB101C fiche technique
BB101C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-505
1st. Edition
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain

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