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Numéro de référence | BB101C | ||
Description | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | ||
Fabricant | Hitachi | ||
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1 Page
BB101C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-505
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
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Pages | Pages 11 | ||
Télécharger | [ BB101C ] |
No | Description détaillée | Fabricant |
BB101C | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | Hitachi |
BB101M | Build in Biasing Circuit MOS FET IC UHF RF Amplifier | Hitachi |
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