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Numéro de référence | BAY80 | ||
Description | Silicon Epitaxial Planar Diode | ||
Fabricant | Vishay Telefunken | ||
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1 Page
Silicon Epitaxial Planar Diode
Applications
General purpose
BAY80
Vishay Telefunken
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
tp=1ms
94 9367
Type
Symbol
VRRM
VR
IFSM
IFRM
IF
IFAV
Tj
Tstg
Value
150
120
1
625
250
200
175
–65...+200
Unit
V
V
A
mA
mA
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=4mm, TL=constant
Symbol
RthJA
Value
350
Unit
K/W
Document Number 85553
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
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Pages | Pages 4 | ||
Télécharger | [ BAY80 ] |
No | Description détaillée | Fabricant |
BAY80 | General purpose diode | Philipss |
BAY80 | Silicon Epitaxial Planar Diode | Vishay Telefunken |
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