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Numéro de référence | BAW79C | ||
Description | Silicon Switching Diodes | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
BAW79A...BAW79D
Silicon Switching Diodes
Switching applications
High breakdown voltage
Common cathode
1
2
3
2
VPS05162
2
13
EHA07003
Type
BAW79A
BAW79B
BAW79C
BAW79D
Marking
GE
GF
GG
GH
1 = A1
1 = A1
1 = A1
1 = A1
Pin Configuration
2 = C1/2 3 = A2
2 = C1/2 3 = A2
2 = C1/2 3 = A2
2 = C1/2 3 = A2
Package
SOT89
SOT89
SOT89
SOT89
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1 s
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Symbol
VR
VRM
IF
IFM
IFS
Ptot
Tj
Tstg
BAW
79A
50
50
BAW BAW
79B 79C
100 200
100 200
1
1
10
1
150
-65 ... 150
BAW Unit
79D
400 V
400
A
W
°C
Thermal Resistance
Junction - soldering point1)
RthJS
35 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-20-2001
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Pages | Pages 3 | ||
Télécharger | [ BAW79C ] |
No | Description détaillée | Fabricant |
BAW79 | Silicon Switching Diodes | Infineon Technologies AG |
BAW79A | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) | Siemens Group |
BAW79A | Silicon Switching Diodes | Infineon Technologies AG |
BAW79B | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) | Siemens Group |
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