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PDF BAW56WT1 Data sheet ( Hoja de datos )
| Número de pieza | BAW56WT1 | |
| Descripción | Dual Switching Diode | |
| Fabricantes | ON | |
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BAW56WT1
Preferred Device
Dual Switching Diode,
Common Anode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max
Unit
Reverse Voltage
VR 70 V
Forward Current
IF 200 mA
Peak Forward Surge Current
IFM(surge)
500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD 200 mW
1.6 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
625 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
ANODE
3
CATHODE
1
2
CATHODE
MARKING
DIAGRAM
3
1
2
SC−70
CASE 419
STYLE 4
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAW56WT1
SC−70
BAW56WT1G SC−70
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 5
1
Publication Order Number:
BAW56WT1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAW56WT1.PDF ] | |
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