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PDF BAW56WT1 Data sheet ( Hoja de datos )
| Número de pieza | BAW56WT1 | |
| Descripción | Dual Switching Diode | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAW56WT1/D
Dual Switching Diode
3
ANODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
A1
Symbol
VR
IF
IFM(surge)
Max
70
200
500
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
200
1.6
0.625
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 60 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
CATHODE
1
2
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)
IR
CD
VF
trr
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
BAW56WT1
Motorola Preferred Device
3
1
2
CASE 419–02, STYLE 4
SC–70/SOT–323
Min Max Unit
70 — Vdc
µAdc
— 30
— 2.5
— 50
— 2.0 pF
mVdc
— 715
— 855
— 1000
— 1250
— 6.0 ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page  
PACKAGE DIMENSIONS
BAW56WT1
A
L
3
S
1
B
2
VD
G
0.05 (0.002)
H
C RN
J
K
CASE 419-02
ISSUE H
SC–70/SOT–323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.035 0.049
D 0.012 0.016
G 0.047 0.055
H 0.000 0.004
J 0.004 0.010
K 0.017 REF
L 0.026 BSC
N 0.028 REF
R 0.031 0.039
S 0.079 0.087
V 0.012 0.016
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.90 1.25
0.30 0.40
1.20 1.40
0.00 0.10
0.10 0.25
0.425 REF
0.650 BSC
0.700 REF
0.80 1.00
2.00 2.20
0.30 0.40
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BAW56WT1.PDF ] | |
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