DataSheetWiki


BAW56W-7 fiches techniques PDF

Diodes Incorporated - DUAL SURFACE MOUNT SWITCHING DIODE

Numéro de référence BAW56W-7
Description DUAL SURFACE MOUNT SWITCHING DIODE
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





1 Page

No Preview Available !





BAW56W-7 fiche technique
BAW56W
DUAL SURFACE MOUNT SWITCHING DIODE
Features
· Fast Switching Speed
· Ultra-Small Surface Mount Package
· For General Purpose Switching Applications
· High Conductance
A
Mechanical Data
· Case: SOT-323, Molded Plastic
· Case Material - UL Flammability Rating
Classification 94V-0
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagram
· Marking: KJC
· Weight: 0.006 grams (approx.)
TOP VIEW
ED
G
H
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Pd
RqJA
Tj , TSTG
BC
K
J
L
M
BAW56W
100
75
53
300
150
2.0
1.0
200
625
-65 to +150
SOT-323
Dim Min Max
A 0.30 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
All Dimensions in mm
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Symbol
VBR(R)
Min
75
Forward Voltage (Note 1)
VFM
¾
Peak Reverse Current (Note 1)
IRM ¾
Junction Capacitance
Reverse Recovery Time
Cj ¾
trr ¾
Note: 1. Short duration test pulse used to minimize self-heating effect.
Max
¾
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
IR = 100mA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
DS30064 Rev. 3 - 2
1 of 3
BAW56W

PagesPages 3
Télécharger [ BAW56W-7 ]


Fiche technique recommandé

No Description détaillée Fabricant
BAW56W-7 DUAL SURFACE MOUNT SWITCHING DIODE Diodes Incorporated
Diodes Incorporated
BAW56W-7 DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Diodes Incorporated
Diodes Incorporated
BAW56W-T1 SURFACE MOUNT FAST SWITCHING DIODE Won-Top Electronics
Won-Top Electronics
BAW56W-T3 SURFACE MOUNT FAST SWITCHING DIODE Won-Top Electronics
Won-Top Electronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche