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Fairchild - High Conductance Ultra Fast Diode

Numéro de référence BAW56
Description High Conductance Ultra Fast Diode
Fabricant Fairchild 
Logo Fairchild 





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BAW56 fiche technique
BAW56
3
2
1
SOT-23
Small Signal Diode
3
A1
12
Connection Diagram
3
12
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VRRM
Maximum Repetitive Reverse Voltage
85
IF(AV)
Average Rectified Forward Current
200
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
Tstg Storage Temperature Range
-55 to +150
TJ Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
150
Thermal Characteristics
Units
V
mA
A
A
°C
°C
Symbol
Parameter
PD Power Dissipation
RθJA Thermal Resistance, Junction to Ambient
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VR Breakdown Voltage
VF Forward Voltage
IR Reverse Current
CT Total Capacitance
trr Reverse Recovery Time
IR = 5.0 µA
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 70 V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C
VR = 0, f = 1.0 MHz
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100
Value
350
357
Units
mW
°C/W
Min
85
Max
715
855
1.0
1.25
2.5
30
50
2.0
6.0
Units
V
mV
mV
V
V
µA
µA
µA
pF
ns
2001 Fairchild Semiconductor Corporation
BAW56, Rev. C

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