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Número de pieza | 74HC1G14 | |
Descripción | Inverting Schmitt-trigger | |
Fabricantes | Philips | |
Logotipo | ||
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No Preview Available ! INTEGRATED CIRCUITS
DATA SHEET
74HC1G14; 74HCT1G14
Inverting Schmitt-trigger
Product specification
File under Integrated Circuits, IC06
1998 Aug 05
1 page Philips Semiconductors
Inverting Schmitt-trigger
Product specification
74HC1G14; 74HCT1G14
DC CHARACTERISTICS FOR THE 74HC1G
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
VOH HIGH-level output
voltage; all outputs
VOH HIGH-level output
voltage; standard
outputs
VOL LOW-level output
voltage; all outputs
VOL LOW-level output
voltage; standard
outputs
II input leakage current
ICC quiescent supply
current
Tamb (°C)
−40 to +85
−40 to +125
MIN. TYP.(1) MAX. MIN. MAX.
1.9 2.0
4.4 4.5
5.9 6.0
4.13 4.32
−
−
−
−
1.9 −
4.4 −
5.9 −
3.7 −
5.63 5.81 −
5.2 −
−0
0.1 −
−0
0.1 −
−0
0.1 −
− 0.15 0.33 −
0.1
0.1
0.1
0.4
− 0.16 0.33 −
0.4
−−
−−
1.0 −
10 −
1.0
20
TEST CONDITIONS
UNIT
VCC (V)
OTHER
V 2.0
V 4.5
V 6.0
V 4.5
V 6.0
V 2.0
V 4.5
V 6.0
V 4.5
V 6.0
µA 6.0
µA 6.0
VI = VIH or VIL;
−IO = 20 µA
VI = VIH or VIL;
−IO = 2.0 mA
VI = VIH or VIL;
−IO = 2.6 mA
VI = VIH or VIL;
IO = 20 µA
VI = VIH or VIL;
IO = 2.0 mA
VI = VIH or VIL;
IO = 2.6 mA
VI = VCC or GND
VI = VCC or GND;
IO = 0
Note
1. All typical values are measured at Tamb = 25 °C.
DC CHARACTERISTICS FOR THE 74HC1G14
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
Tamb (°C)
−40 to +85
−40 to +125
MIN. TYP.(1) MAX. MIN. MAX.
TEST CONDITIONS
UNIT
VCC (V) WAVEFORMS
VT+ positive-going threshold 0.7 1.09 1.5 0.7 1.5 V 2.0 see Figs 5 and 6
1.7 2.36 3.15 1.7
3.15 V 4.5
2.1 3.12 4.2 2.1 4.2 V 6.0
VT− negative-going threshold 0.3 0.60 0.9 0.3 0.9 V 2.0 see Figs 5 and 6
0.9 1.53 2.0 0.9 2.0 V 4.5
1.2 2.08 2.6 1.2 2.6 V 6.0
VH
hysteresis (VT+ − VT−)
0.2 0.48 1.0
0.2
1.0
V 2.0
see Figs 5 and 6
0.4 0.83 1.4 0.4 1.4 V 4.5
0.6 1.04 1.6 0.6 1.6 V 6.0
Note
1. All typical values are measured at Tamb = 25 °C.
1998 Aug 05
5
5 Page Philips Semiconductors
Inverting Schmitt-trigger
Product specification
74HC1G14; 74HCT1G14
APPLICATION INFORMATION
The slow input rise and fall times cause additional power
dissipation, this can be calculated using the following
formula:
Pad = fi × (tr × ICCa + tf × ICCa) × VCC
Where:
Pad = additional power dissipation (µW)
fi = input frequency (MHz)
tr = input rise time (ns); 10% to 90%
tf = input fall time (ns); 90% to 10%
ICCa = average additional supply current (µA).
Average ICCa differs with positive or negative input
transitions, as shown in Fig.14 and Fig.15.
HC1G/HCT1G14 used in relaxation oscillator circuit,
see Fig.14 and Fig.16.
Note to the application information:
1. All values given are typical unless otherwise specified.
handboo2k,0h0alfpage
average
ICC
(µA)
150
100
MNA036
positive-going
edge
50
negative-going
edge
0
0 2.0 4.0 6.0
VCC (V)
Fig.14 Average ICC for HC1G Schmitt-trigger
devices; linear change of VI between
0.1VCC to 0.9VCC.
handboo2k,0h0alfpage
average
ICC
(µA)
150
100
50
MNA058
positive-going
edge
negative-going
edge
handbook, halfpage
R
C
MNA035
0
0 2 4 VCC (V) 6
Fig.15 Average ICC for HCT1G Schmitt-trigger
devices; linear change of VI between
0.1VCC to 0.9VCC.
For HC1G: f = T-1-- ≈ 0----.--8----×-1----R-----C---
For HCT1G: f = T-1-- ≈ 0----.--6---7---1--×----R-----C---
Fig.16 Relaxation oscillator using the
HC1G/HCT1G14.
1998 Aug 05
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet 74HC1G14.PDF ] |
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