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Numéro de référence | 2N1613 | ||
Description | SWITCHES AND UNIVERSAL AMPLIFIERS | ||
Fabricant | STMicroelectronics | ||
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1 Page
2N1613
2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION
The 2N1613 and 2N1711 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They
are designed for use in high-performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers
where low noise is an important factor.
Products approved to CECC 50002-104 avail-
able on request.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VEBO
IC
Pto t
Tstg, Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (RBE ≤ 10 Ω)
Emitter-base Voltage (IC = 0)
Collector Current
Total Power Dissipation at T amb ≤ 25 °C
at T c as e ≤ 25 °C
at T c as e ≤ 100 °C
Storage and Junction Temperature
January 1989
V al ue
75
50
7
500
0.8
3
1.7
– 65 to 200
Unit
V
V
V
mA
W
W
W
°C
1/5
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Pages | Pages 5 | ||
Télécharger | [ 2N1613 ] |
No | Description détaillée | Fabricant |
2N1613 | NPN medium power transistor | Philips |
2N1613 | SWITCHES AND UNIVERSAL AMPLIFIERS | STMicroelectronics |
2N1613 | NPN LISICON PLANAR EPITAXIAL TRANSISTORS | Micro Electronics |
2N1613 | NPN Small Signal General Purpose Amplifiers | Fairchild |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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