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2MBI75P-140 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fuji - IGBT Module

شماره قطعه 2MBI75P-140
شرح مفصل IGBT Module
تولید کننده Fuji 
آرم Fuji 


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2MBI75P-140 شرح
2MBI75P-140
IGBT Module P-Series
1400V / 75A 2 in one-package
Features
· Small temperature dependence of the turn-off switching loss
· Easy to connect in parallel
· Wide RBSOA (square up to 2 time of rated current) and high short-
circuit withstand capability
· Low loss and soft-switching (reduction of EMI noise)
Applications
· General purpose inverter
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Equivalent Circuit Schematic
C1 E2
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IC Continuous Tc=25°C
Tc=80°C
ICp 1ms Tc=25°C
Tc=80°C
-IC
-IC pulse
Collector Power Dissipation
PC 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
Screw Torque
Mounting *2
Terminals *2
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
G1 E1
G2 E2
Rating
1400
±20
100
75
200
150
75
150
600
+150
-40 to +125
2500
3.5
3.5
Unit
V
V
A
W
°C
VAC
N·m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Zero gate voltage collector current ICES
Gate-Emitter leakage current
IGES
Gate-Emitter threshold voltage
VGE(th)
Collector-Emitter saturation voltage VCE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
VGE=0V, VCE=1400V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, IC=75A, Tj=25°C
VGE=15V, IC=75A, Tj=125°C
VCE=10V
VGE=0V
f=1MHz
VCC=600V
IC=75A
VGE=±15V
RG=16
IF=75A, VGE=0V
IF=75A
Characteristics
Min.
Typ.
––
––
6.0 8.0
– 2.7
– 3.3
– 7500
– 1000
– 500
––
––
––
––
– 2.4
––
Max.
1.0
200
9.0
3.0
1.20
0.60
1.00
0.30
3.3
0.35
Unit
mA
nA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
IGBT
Diode
the base to cooling fin
Min.
Typ.
0.05
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Max.
0.21
0.47
Unit
°C/W
°C/W
°C/W

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