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2MBI50N-120 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fuji - IGBT(1200V 50A)

شماره قطعه 2MBI50N-120
شرح مفصل IGBT(1200V 50A)
تولید کننده Fuji 
آرم Fuji 


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2MBI50N-120 شرح
IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
50
100
50
100
400
+150
-40 +125
A
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *2
2500
3.5
3.5
V
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=50mA
VGE=15V IC=50A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=50A
VGE=± 15V
RG=24
IF=50A VGE=0V
IF=50A
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
8000
2900
2580
0.65
0.25
0.85
0.35
Max.
1.0
15
7.5
3.3
Units
mA
µA
V
V
pF
1.2
0.6
1.5 µs
0.5
3.0 V
350 ns
Min.
Typ.
0.05
Max.
0.31
0.85
Units
°C/W

قانون اساسیصفحه 4
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