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2MBI50N-060 fiches techniques PDF

Fuji - IGBT(600V 50A)

Numéro de référence 2MBI50N-060
Description IGBT(600V 50A)
Fabricant Fuji 
Logo Fuji 





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2MBI50N-060 fiche technique
IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (~3 Times Rated Current)
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
600 V
± 20 V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
50
100
50
100
250
+150
-40 +125
A
W
°C
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *2
2500
3.5
3.5
V
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=50mA
VGE=15V IC=50A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=50A
VGE=± 15V
RG=51
IF=50A VGE=0V
IF=50A
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
3300
730
330
0.6
0.2
0.6
0.2
Max.
1.0
15
7.5
2.8
1.2
0.6
1.0
0.35
3.0
300
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.05
Max.
0.50
1.33
Units
°C/W

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