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2EZ36 fiches techniques PDF

Pan Jit International - GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)

Numéro de référence 2EZ36
Description GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)
Fabricant Pan Jit International 
Logo Pan Jit International 





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2EZ36 fiche technique
2EZ11 THRU 2EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts
FEATURES
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Excellent clamping capability
l Typical ID less than 1 £gA above 11V
l High temperature soldering :
260 ¢J /10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
DO-15
MECHANICAL DATA
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.015 ounce, 0.04 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ¢J ambient temperature unless otherwise specified.
SYMBOL
Peak Pulse Power Dissipation (Note A)
Derate above 75 ¢J
PD
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)
IFSM
Operating Junction and Storage Temperature Range
TJ,TSTG
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
VALUE
2
24
15
UNITS
Watts
mW/¢J
Amps
-55 to +150 ¢J

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