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PDF 2CK120 Data sheet ( Hoja de datos )
| Número de pieza | 2CK120 | |
| Descripción | SILICON EPITAXIAL PLANAR SWITCHING DIODE | |
| Fabricantes | Shanghai Sunrise Electronics | |
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
2CK120
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 35
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
.060 (1.5)
.090 (2.3) DIA.
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
VALUE
Reverse Voltage
VR 75
Peak Reverse Voltage
VRM 100
Forward Current (average)
IO 150
Repetitive Forward Peak Current
IFRM
400
Forward Voltage (IF=10mA)
VF 1
Reverse Current (VR=20V)
Reverse Current (VR=75V)
Reverse Current (VR=20V,TJ=100oC)
Capacitance (note 1)
IR1 25
5
IR2 50
Ct 4
Reverse Charge (IF=10mA)
Qr 57
Thermal Resistance (junction to ambient, note 2)
Rθ(ja)
0.35
Operating Junction and Storage Temperature Range
TSTG,TJ
-55 +175
Notes:
1. VR=0V, f=1 MHz
2. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
UNITS
V
V
mA
mA
V
nA
µA
µA
pF
pC
oC/mW
oC
http://www.sse-diode.com
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