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PDF TC2014 Data sheet ( Hoja de datos )

Número de pieza TC2014
Descripción 50 mA / 100 mA / 150 mA CMOS LDOs with Shutdown and Reference Bypass
Fabricantes Microchip Technology 
Logotipo Microchip Technology Logotipo



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M TC2014/2015/2185
50 mA, 100 mA, 150 mA CMOS LDOs with
Shutdown and Reference Bypass
Features
• Low Supply Current: 80 µA (Max)
• Low Dropout Voltage: 140 mV (Typ) @ 150 mA
• High Output Voltage Accuracy: ±0.4% (Typ)
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Fast Shutdown Response Time: 60 µsec (Typ)
• Over-Current Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin Compatible Upgrades for Bipolar Regulators
• Wide Operating Temperature Range:
-40°C to +125°C
Applications
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular / GSM / PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
Package Type
5-Pin SOT-23A
VOUT
Bypass
54
TC2014
TC2015
TC2185
12 3
VIN GND SHDN
General Description
The TC2014, TC2015 and TC2185 are high-accuracy
(typically ±0.4%) CMOS upgrades for bipolar low drop-
out regulators, such as the LP2980. Total supply cur-
rent is typically 55 µA; 20 to 60 times lower than in
bipolar regulators.
The key features of the device include low noise oper-
ation (plus bypass reference), low dropout voltage
– typically 45 mV for the TC2014, 90 mV for the
TC2015, and 140 mV for the TC2185, at full load – and
fast response to step changes in load. Supply current
is reduced to 0.5 µA (max) and VOUT falls to zero when
the shutdown input is low. The devices also incorporate
over-current protection.
The TC2014, TC2015 and TC2185 are stable with an
output capacitor of 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output versions, see the TC1107
(DS21356), TC1108 (DS21357) and TC1173
(DS21362) (IOUT = 300 mA) datasheets.
Related Literature
• Application Notes: AN765, AN766, AN776 and
AN792
Typical Application
VIN 1 VIN
+
1 µF
VOUT
5
VOUT
+
1 µF
2 TC2014
GND TC2015
TC2185
3
SHDN Bypass
4
Shutdown Control
(from Power Control Logic)
0.01 µF
Reference
Bypass Cap
(Optional)
2003 Microchip Technology Inc.
DS21662C-page 1

1 page




TC2014 pdf
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
60.0
58.0
56.0
54.0
52.0
50.0
48.0
46.0
44.0
VR = 2.7V
COUT = 3.3 µF
VIN = 6.0V
VIN = 2.8V
2.705
2.700
2.695
2.690
2.685
2.680
2.675
2.670
2.665
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
VIN = 3.7V
VIN = 6.0V
FIGURE 2-7:
Temperature.
Temperature (°C)
Supply Current vs. Junction
Junction Temperature (°C)
FIGURE 2-10:
Output Voltage vs. Junction
Temperature (150 mA).
0.5
0.3 TA = -45°C
TA = +25°C
0.1
-0.1
-0.3
-0.5
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
3.7 4 4.3 4.6 4.9 5.2
Supply Voltage (V)
TA = +125°C
5.5 5.8
FIGURE 2-8:
Voltage.
Load Regulation vs. Supply
2.705
2.7 TA = +25°C
2.695
2.69
2.685
TA = -45°C
2.68
2.675
2.67
2.665
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
3.7 4 4.3
TA = +125°C
4.6 4.9 5.2
5.5
Supply Voltage (V)
5.8
FIGURE 2-11:
Voltage.
Output Voltage vs. Supply
2.690
2.688
2.686
2.684
2.682
2.680
2.678
2.676
2.674
2.672
2.670
VR = 2.7V
COUT = 3.3 µF
IL = 0.1 mA
VIN = 6.0V
VIN = 3.7V
Junction Temperature (°C)
FIGURE 2-9:
Output Voltage vs. Junction
Temperature (0.1 mA).
0.160
0.120
VR = 2.7V
COUT = 3.3 µF
0.080
0.040
0.000
IL = 150 mA
IL = 100 mA
IL = 50 mA
IL = 20 mA
Junction Temperature (°C)
FIGURE 2-12:
Dropout Voltage vs.
Junction Temperature.
2003 Microchip Technology Inc.
DS21662C-page 5

5 Page





TC2014 arduino
5.0 THERMAL CONSIDERATIONS
5.1 Power Dissipation
The amount of power the regulator dissipates is prima-
rily a function of input voltage, output voltage and
output current.
The following equation is used to calculate worst-case
power dissipation:
EQUATION
PD ≈ (VINMAX VOUTMIN)ILMAX
Where:
PD
VINMAX
VOUTMIN
ILMAX
= Worst-case actual power dissipation
= Maximum voltage on VIN
= Minimum regulator output voltage
= Maximum output (load) current
The maximum allowable power dissipation (PDMAX) is
a function of the maximum ambient temperature
(TAMAX), the maximum allowable die temperature
(TJMAX) (+125°C) and the thermal resistance from junc-
tion-to-air (θJA). The 5-Pin SOT-23A package has a θJA
of approximately 220°C/Watt when mounted on a
typical two layer FR4 dielectric copper clad PC board.
EQUATION
PDMAX
=
T----J--M-----A---X----–-----T---A---M-----A---X-
θJA
Where all terms are previously defined.
TC2014/2015/2185
The PD equation can be used in conjunction with the
PDMAX equation to ensure regulator thermal operation
is within limits. For example:
Given:
VINMAX
VOUTMIN
ILOADMAX
TJMAX
TAMAX
= 3.0V +10%
= 2.7V – 2.5%
= 40 mA
= +125°C
= +55°C
Find:
1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD = (VINMAX VOUTMIN)ILMAX
= [---(--3---.--0----×-----1---.--1---)---–-----(--2----.-72---2-×--0---0---.--9---7---5---)---]--4---0----×-----1---0------3-
= 26.7mW
Maximum allowable power dissipation:
PDMAX
=
T----J--M-----A---X----–-----T---A---M-----A---X-
θJA
= 1---2---25---2--–-0---5---5--
= 318mW
In this example, the TC2014 dissipates a maximum of
only 26.7 mW; far below the allowable limit of 318 mW.
In a similar manner, the PD equation and PDMAX equa-
tion can be used to calculate maximum current and/or
input voltage limits.
5.2 Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads and wide power
supply bus lines combine to lower θJA and, therefore,
increase the maximum allowable power dissipation
limit.
2003 Microchip Technology Inc.
DS21662C-page 11

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