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دیتاشیت - Shanghai Sunrise Electronics - SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER

شماره قطعه SF1E
شرح مفصل SURFACE MOUNT SUPER FAST SWITCHING RECTIFIER
تولید کننده Shanghai Sunrise Electronics 
آرم Shanghai Sunrise Electronics 


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SF1E شرح
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SF1A THRU SF1G
SURFACE MOUNT SUPER
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 400V CURRENT: 1.0A
TECHNICAL
SPECIFICATION
FEATURS
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Open junction chip,silastic passivated
• Super fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
DSMA/DO-214AC
B
AC
I
D
F
GH
AB C D
MAX. .110(2.79) .177(4.50) .075(1.90) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
EF GHI
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52) .035(0.88)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76) .027(0.68)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60HZ, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL SF1A SF1B SF1C SF1D SF1E SF1G UNITS
Maximum Repetitive Peak Reverse Voltage
VRRM
50 100 150 200 300 400
V
Maximum RMS Voltage
VRMS
35 70 105 140 210 280
V
Maximum DC Blocking Voltage
VDC 50 100 150 200 300 400 V
Maximum Average Forward Rectified Current
(TL=110oC)
IF(AV) 1.0 A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
30
A
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=100oC
Maximum Reverse Recovery Time (Note 1)
VF
IR
trr
0.95 1.25
5.0
200
35
V
µA
µA
nS
Typical Junction Capacitance
(Note 2)
Typical Thermal RSFistance
(Note 3)
Storage and Operation Junction Temperature
CJ
Rθ(ja)
TSTG,TJ
10
40
-50 to +150
pF
oC/W
oC
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal rSFistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com

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