DataSheetWiki


SF0R3G42 fiches techniques PDF

Toshiba Semiconductor - LOW POWER SWITCHING AND CONTROL APPLICATIONS

Numéro de référence SF0R3G42
Description LOW POWER SWITCHING AND CONTROL APPLICATIONS
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





SF0R3G42 fiche technique
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R3G42
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
l Repetitive Peak OffState Voltage : VDRM = 400V
Repetitive Peak Reverse Voltage : VRRM = 400V
l Average OnState Current
: IT (AV) = 300mA
l Plastic Mold Type.
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage
(RGK = 1k)
NonRepetitive Peak Reverse
Voltage (Non-Repetitive<5ms,
RGK = 1k, Tj = 0 ~ 125°C)
Average OnState Current
(Half Sine Waveform Ta = 45°C)
R.M.S OnState Current
Peak One Cycle Surge OnState
Current (Non-Repetitive)
I2t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
400
500
300
450
9 (50Hz)
9.9 (60Hz)
0.4
0.1
0.01
3.5
5
125
40~125
40~125
Note: Should be used with gate resistance as follows.
UNIT
V
V
mA
mA
A
A2s
W
W
V
V
mA
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
SF0R3G42
Unit: mm
TO92
SC43
135A1A
1 2001-07-13

PagesPages 7
Télécharger [ SF0R3G42 ]


Fiche technique recommandé

No Description détaillée Fabricant
SF0R3G42 LOW POWER SWITCHING AND CONTROL APPLICATIONS Toshiba Semiconductor
Toshiba Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche