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PDF SDM4952 Data sheet ( Hoja de datos )
| Número de pieza | SDM4952 | |
| Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics Corp. | |
| Logotipo |  |
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S DM4952
S amHop Microelectronics C orp.
March , 2003
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
-20V
ID
-5.3A
R DS (ON) ( m W ) MAX
50 @ VGS = -4.5V
75 @ VGS = -2.7V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
87 65
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-Pulsedb (300us Pulse Width)
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-20
12
5.3
21
2.5
2
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
62.5
C /W
1
1 page  
S DM4952
-VDD
V IN R L
D VOUT
VG S
RGEN G
S
F igure 11. S witching T es t C ircuit
td(on)
VOUT
ton
tr
td(off)
90%
10%
toff
tf
90%
10%
VIN
10%
90%
50% 50%
INVE R TE D
PULS E WIDTH
F igure 12. S witching Waveforms
2
1
Duty C ycle=0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
S ingle P uls e
10-3
10-2
10-1
S quare Wave P uls e Duration (s ec)
1
P DM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
10
100
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SDM4952.PDF ] | |
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