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PDF S9004P2CT Data sheet ( Hoja de datos )
| Número de pieza | S9004P2CT | |
| Descripción | 30A SCHOTTKY BARRIER RECTIFIER | |
| Fabricantes | Diodes Incorporated | |
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S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material - UL Flammability
Classification 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Weight: 2.24 grams (approx)
· Mounting Position: Any
· Marking: Type Number
B
C
K
D
E
J
HH
L
M
A
G
N
P
TO-220AB
Dim Min Max
A 14.22 15.88
B 9.65 10.67
C 2.54 3.43
D 5.84 6.86
E ¾ 6.25
G 12.70 14.73
H 2.29 2.79
J 0.51 1.14
K 3.53Æ 4.09Æ
L 3.56 4.83
M 1.14 1.40
N 0.30 0.64
P 2.03 2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Minimum Avalanche Breakdown Voltage
per element (Note 1)
@ 1.5A
Average Rectified Output Current
(Note 1 & 3)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) (Note 3)
Instantaneous Forward Voltage Drop
@ iF = 15A
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
Typical Junction Capacitance per element (Note 2)
Voltage Rate of Change at Rated DC Blocking Voltage
Non-repetitive Avalanche Energy
(Constant Current During a 20ms pulse)
@ TC = 125°C
Typical Thermal Resistance Junction to Case per element
(Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
¾
IO
IFSM
vFM
IRM
Cj
dv/dt
W
RqJc
Tj, TSTG
S9004P2CT
60
70
30
250
0.56
2.0
150
470
10000
10
1.5
-60 +150
Unit
V
V
A
A
V
mA
pF
V/ms
mJ
K/W
°C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. IFSM and IO values shown are for entire package. For any single diode the values are one half of listed value.
DS23027 Rev. P-5
1 of 2
S9004P2CT
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