DataSheetWiki


P1201-04 fiches techniques PDF

Hamamatsu Corporation - CdS photoconductive cell

Numéro de référence P1201-04
Description CdS photoconductive cell
Fabricant Hamamatsu Corporation 
Logo Hamamatsu Corporation 





1 Page

No Preview Available !





P1201-04 fiche technique
VISIBLE DETECTOR
CdS photoconductive cell
Resin coating type (5R type)
Standard type designed for general-purpose, wide application
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their
operating circuits simple and small.
Features
l Small size, thin package
l Low price
l Wide range of sensor lineup
Applications
l Programed electronic shutter and stroboscope light control
for compact camera
l Auto dimmer for digital display, CRT and room illumination
l Sensor for automatic light on/off
l Sensor for electronic toy and teaching aid material
s Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Absolute maximum ratings
Supply
voltage
Power
dissipation
P
Ambient
temperature
Ta
Peak
sensitivity
wavelength
lp
Characteristics *
Cell resistance *
10 lx, 2856 K
0 lx *!
g


*"
Response time 10 lx *#
Rise time Fall time
tr tf
Min. Max. Min.
(Vdc) (mW)
(°C)
(nm)
(kW)
(kW)
(MW) 100 to 10 lx (ms)
(ms)
P687-02
30 -30 to +50 620
5
20
5.0 0.70
60
25
P1201-04
P1201-06
100
50 -30 to +60 540
50
200
100
20 0.90
40
30
P1241-04
3 9 0.2 0.70
P1241-05
50
-30 to +60 560
8
24
0.5 0.70
50
40
P1241-06
30
5 20 0.5 0.75
P1444
P1445
100
-30 to +50 620
10
48
50
140
5.0
20
0.85
40
10
*1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after shutting off the 10 lx light.
*4: Typical gamma characteristics (within ±0.10 variations) between 100 lx to 10 lx
γ
100
10
=
log (R100) - log (R10)
log (E100) - log (E10)
E, E: illuminance 100 lx, 10 lx
R, R: resistance at 100 lx and 10 lx respectively
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (when fully
illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to
37 %.
1

PagesPages 2
Télécharger [ P1201-04 ]


Fiche technique recommandé

No Description détaillée Fabricant
P1201-01 CdS photoconductive cell Hamamatsu Corporation
Hamamatsu Corporation
P1201-04 CdS photoconductive cell Hamamatsu Corporation
Hamamatsu Corporation
P1201-06 CdS photoconductive cell Hamamatsu Corporation
Hamamatsu Corporation

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche