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PDF NX8501 Data sheet ( Hoja de datos )
| Número de pieza | NX8501 | |
| Descripción | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
LASER DIODE
NX8501 Series
1 510 nm OPTICAL FIBER COMMUNICATIONS
InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
DESCRIPTION
The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber.
The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation
over wide temperature range of 0 to +65 °C.
It is designed for on-line monitoring of dense WDM fiber-optic networks.
FEATURES
• Peak wavelength
λp = 1 510 nm
• Output power
Pf = 2.0 mW
• Low threshold current
Ith = 20 mA @ TC = 25 °C
• Wide operating temperature range TC = 0 to +65 °C
• InGaAs monitor PIN-PD
• Based on Bellcore TA-NWT-000983
NX8501AC
Optical Fiber
SM-9/125
Length: 1 m
0.9
3.2±0.25
7±0.2
PACKAGE DIMENSIONS
in millimeters
Optical Fiber
SM-9/125
Length: 1 m
NX8501BC
0.9
3.2±0.25
7±0.2
Optical Fiber
SM-9/125
Length: 1 m
NX8501CC
0.9
3.2±0.25
7±0.2
0.45±0.05
0.45±0.05
4– 0.45
±0.05
6±0.1
6±1.0
12.7±0.2
17.0±0.2
PIN CONNECTIONS
PIN CONNECTIONS
P.C.D. = 2 4 3
PD
4 3 P.C.D. = 2 4 3
PD
43
12 1 2
LD
Case
12
12
LD
Case
PIN CONNECTIONS
16
P.C.D. = 2
2– 2.5
2
PD
2
3
1
31
4
12±0.15
4 LD Case
16.0
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13854EJ3V0DS00 (3rd edition)
Date Published March 1999 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1998, 1999
1 page  
NX8501 Series
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
OUTPUT POWER FROM FIBER vs.
FORWARD CURRENT
3.0
OPERATING CURRENT AND THRESHOLD
CURRENT vs. CASE TEMPERATURE
60
2.5
TC = 0 ˚C
2.0
25 ˚C
1.5
65 ˚C
1.0
0.5
50
40 Iop@Pf = 2.0 mW
30
20
Ith
10
0 10 20 30 40 50 60
Forward Current IF (mA)
0
–10 0
10 20 30 40 50 60 70
Case Temperature TC (˚C)
TEMPERATURE DEPENDENCE OF
DIFFERENTIAL EFFICIENCY FROM FIBER
0.20
FORWARD CURRENT vs.
FORWARD VOLTAGE
50
0.16 40
0.12 30
0.08 20
0.04 10
0
–10 0 10 20 30 40 50 60 70
Case Temperature TC (˚C)
OUTPUT POWER FROM FIBER vs.
LD MONITOR CURRENT
3.0
2.5
2.0
1.5
1.0
0.5
0 0.5 1.0 1.5
LD Monitor Current Im (mA)
0 0.5 1.0 1.5 2.0
Forward Voltage VF (V)
LONGITUDINAL MODE FROM FIBER
0
–10
–20
–30
–40
–50
–60
–70
1 500
1 510
Wavelength λ (nm)
1 520
Data Sheet P13854EJ3V0DS00
5
5 Page 
NX8501 Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
NEC Corporation
NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
Data Sheet P13854EJ3V0DS00
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NX8501.PDF ] | |
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