|
|
PDF NTP85N03 Data sheet ( Hoja de datos )
| Número de pieza | NTP85N03 | |
| Descripción | Power MOSFET 85 Amps / 28 Volts | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTP85N03 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
NTP85N03, NTB85N03
Power MOSFET
85 Amps, 28 Volts
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
Drain Current
− Continuous @ TC = 25°C
− Single Pulse (tp = 10 ms)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 mH,
IL(pk) = 17 A, RG = 25 W)
VDSS
28
VGS
"20
ID
IDM
PD
TJ, Tstg
EAS
85*
190
80
0.66
− 55
to
+150
733
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
RqJC
RqJA
1.55
70
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL 260
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
*Chip current capability limited by package.
Unit
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
85 AMPERES
28 VOLTS
RDS(on) = 6.1 mW (Typ.)
N−Channel
D
G
4
S
4
12
3
1
2
3
TO−220AB
CASE 221A
Style 5
D2PAK
CASE 418AA
Style 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx85N03
LLYWW
1
Gate
3
Source
NTx85N03
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx85N03
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP85N03
NTB85N03
TO−220AB
D2PAK
50 Units/Rail
50 Units/Rail
NTB85N03T4
D2PAK
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 1
1
Publication Order Number:
NTP85N03/D
1 page  
NTP85N03, NTB85N03
12 36
10
VDS
8
6
Qgs
4
2
QT
Qgd
VGS
ID = 15
TJ = 25°C
30
24
18
12
6
00
0 5 10 15 20 25 30
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
15
VGS = 0 V
TJ = 25°C
12
1000
VDD = 24 V
ID = 20 A
VGS = 10 V
100
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
9
6
3
0
0.1 0.3
0.5 0.7
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RqJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
http://onsemi.com
5
5 Page 
NTP85N03, NTB85N03
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NTP85N03.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTP85N03 | Power MOSFET 85 Amps / 28 Volts | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |