|
|
PDF NTP45N06 Data sheet ( Hoja de datos )
| Número de pieza | NTP45N06 | |
| Descripción | Power MOSFET 45 Amps / 60 Volts | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTP45N06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
NTP45N06, NTB45N06
Power MOSFET
45 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
45
30
150
125
0.83
3.2
2.4
–55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 Ω,
IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)
EAS 240 mJ
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
http://onsemi.com
45 AMPERES
60 VOLTS
RDS(on) = 26 mΩ
N–Channel
D
G
4
S
4
12
1
2
3
TO–220AB
CASE 221A
STYLE 5
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP45N06
LLYWW
1
Gate
3
Source
NTB45N06
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx45N06
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP45N06
NTB45N06
NTB45N06T4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 0
1
Publication Order Number:
NTP45N06/D
1 page  
NTP45N06, NTB45N06
1
Normalized to RθJC at Steady State
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to RθJA at Steady State,
1″ square Cu Pad, Cu Area 1.127 in2,
3 x 3 inch FR4 board
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t, TIME (s)
Figure 14. Thermal Response
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTP45N06.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTP45N06 | Power MOSFET 45 Amps / 60 Volts | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |