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PDF NTP27N06 Data sheet ( Hoja de datos )
| Número de pieza | NTP27N06 | |
| Descripción | Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK | |
| Fabricantes | ON Semiconductor | |
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NTP27N06, NTB27N06
Power MOSFET
27 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
60
60
"20
"30
27
15
80
88.2
0.59
Operating and Storage Temperature Range TJ, Tstg –55 to
+175
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
L = 0.3 mH, IL(pk) = 27 A,VDS = 60 Vdc)
Thermal Resistance – Junction–to–Case
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RθJC
TL
109
1.7
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
27 AMPERES
60 VOLTS
RDS(on) = 46 mΩ
N–Channel
D
G
4
S
4
12
3
1
2
3
TO–220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx27N06
LLYWW
1
Gate
3
Source
NTx27N06
LLYWW
12 3
Gate Drain Source
2
Drain
NTx27N06
x
LL
Y
WW
= Device Code
= B or P
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP27N06
NTB27N06
NTB27N06T4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 2
1
Publication Order Number:
NTP27N06/D
1 page  
NTP27N06, NTB27N06
12
10 QT
1000
8
Q1
6
Q2
VGS
4
2 ID = 27 A
TJ = 25°C
0
0 10 20 30 40 50 60 70
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
100
10
1
1
tf
tr td(off)
td(on)
VDS = 30 V
ID = 27 A
VGS = 10 V
10
RG, GATE RESISTANCE (Ω)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
60
VGS = 0 V
50 TJ = 25°C
40
30
20
10
0
0.6 0.68 0.76 0.84 0.92
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
1
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance –
General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 µs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) – TC)/(RθJC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
http://onsemi.com
5
5 Page 
NTP27N06, NTB27N06
PACKAGE DIMENSIONS
TO–220
CASE 221A–09
ISSUE AA
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NTP27N06.PDF ] | |
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