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PDF NE52118 Data sheet ( Hoja de datos )
| Número de pieza | NE52118 | |
| Descripción | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NE52118 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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PRELIMINARY DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER
NPN GaAs HBT
FEATURES
• For Low Noise & High Gain amplifiers
NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)
OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)
• 4-pin super minimold package
• Grounded Emitter Transistor
ORDERING INFORMATION (PLAN)
Part Number
NE52118-T1
Package
4-pin super minimold
Marking
V41
Supplying Form
Embossed tape 8 mm wide.
Pin 3, pin 4 face to perforation side of the tape.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE52118)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
Tstg
Ratings
5.0
3.0
3.0
7
0.3
30
+125
–65 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14544EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999
1 page  
OUTPUT CHARACTERISTICS
OUTPUT POWER, COLLECTOR CURRENT vs.
INPUT POWER
25
f = 900 MHz
VCE = 2 V
20
Pout
120
100
15 80
10 60
5 Ic 40
0 20
–5
–25 –20 –15 –10 –5
0
0
5 10
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR CURRENT vs.
INPUT POWER
25
f = 900 MHz
VCE = 3 V
20
Pout
120
100
15 80
10 Ic 60
5 40
0 20
–5
–25 –20 –15 –10 –5
0
0
5 10
Input Power Pin (dBm)
NE52118
OUTPUT POWER, COLLECTOR CURRENT vs.
INPUT POWER
25
f = 2 GHz
VCE = 2 V
20
120
100
Pout
15 80
10 60
5 40
Ic
0 20
–5
–25 –20 –15 –10 –5
0
0
5 10
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR CURRENT vs.
INPUT POWER
25
f = 2 GHz
VCE = 3 V
20
120
100
Pout
15 80
10 60
5 40
Ic
0 20
–5
–25 –20 –15 –10 –5
0
0
5 10
Input Power Pin (dBm)
Preliminary Data Sheet P14544EJ1V0DS00
5
5 Page 
NE52118
PRECAUTION
Avoid high static voltage and electric fields.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Infrared Reflow
VPS
Wave Soldering
Partial Heating
Package peak temperature: 230 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limit: NoneNote
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Count: 2, Exposure limit: NoneNote
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Count: 1, Exposure limit: NoneNote
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: NoneNote
Recommended Condition
Symbol
IR30-00-3
VP15-00-2
WS60-00-1
–
Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Preliminary Data Sheet P14544EJ1V0DS00
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NE52118.PDF ] | |
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