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NEC - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

Numéro de référence NE32400
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Fabricant NEC 
Logo NEC 





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NE32400 fiche technique
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32400, NE24200
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs
and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
for commercial systems, industrial and space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length : Lg = 0.25 µm
• Gate Width : Wg = 200 µm
ORDERING INFORMATION
PART NUMBER
NE32400
NE24200
QUALITY GRADE
Standard (Grade D)
Grade C and B (B is special order)
APPLICATIONS
Commercial
Industrial, space
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDS 4.0
Gate to Source Voltage
VGS –3.0
Drain Current
ID IDSS
Total Power Dissipation
Ptot*
200
Channel Temperature
Tch 175
Storage Temperature
Tstg –65 to +175
* Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t)
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
Gate to Source Leak Current
IGSO
Saturated Drain Current
IDSS
Gate to Source Cutoff Voltage VGS(off)
Transconductance
gm
Thermal Resistance
Rth*
Noise Figure
NF
Associated Gain
Ga
MIN.
15
–0.2
45
10.0
TYP.
0.5
40
–0.8
60
0.6
11.0
MAX.
10
70
–2.0
260
0.7
UNIT
µA
mA
V
mS
˚C/W
dB
dB
TEST CONDITIONS
VGS = –3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 µA
VDS = 2 V, ID = 10 mA
channel to case
VDS = 2 V, ID = 10 mA, f = 12 GHz
RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
Document No. P11345EJ2V0DS00 (2nd edition)
(Previous No. TD-2358)
Date Published May 1996 P
Printed in Japan
©
1996

PagesPages 8
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