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NE3210S01-T1 fiches techniques PDF

NEC - X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

Numéro de référence NE3210S01-T1
Description X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
Fabricant NEC 
Logo NEC 





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NE3210S01-T1 fiche technique
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Length: Lg 0.20 µm
• Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number
Supplying Form
NE3210S01-T1
Tape & reel 1 000 pcs./reel
NE3210S01-T1B
Tape & reel 4 000 pcs./reel
Marking
K
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current
ID
Gate Current
IG
Total Power Dissipation
Ptot
Channel Temperature
Tch
Storage Temperature
Tstg
Ratings
4.0
–3.0
IDSS
100
165
125
–65 to +125
Unit
V
V
mA
µA
mW
°C
°C
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Characteristics
Symbol MIN.
TYP.
Drain to Source Voltage
VDS 1
2
Drain Current
ID 5 10
Input Power
Pin
MAX.
3
15
0
Unit
V
mA
dBm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1999

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