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Fairchild - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence NDT456
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant Fairchild 
Logo Fairchild 





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NDT456 fiche technique
December 1998
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
computer power management, battery powered circuits,
and DC motor control.
Features
-7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V
RDS(ON) = 0.045 @ VGS = -4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
______________________________________________________________________________
DD
GD S
GS
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
NDT456P
-30
±20
±7.5
±20
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT456P Rev. F

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