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Numéro de référence | NDT452 | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Fairchild | ||
Logo | |||
1 Page
June 1996
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and DC motor
control.
-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V
RDS(ON) = 0.1Ω @ VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
GD S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
D
GS
NDT452AP
-30
±20
-5
- 15
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT452AP Rev. B1
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Pages | Pages 6 | ||
Télécharger | [ NDT452 ] |
No | Description détaillée | Fabricant |
NDT451 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
NDT451 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
NDT451AN | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
NDT451N | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
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