NDT451N Datasheet PDF - Fairchild
| Part Number | NDT451N | |
| Description | N-Channel Enhancement Mode Field Effect Transistor | |
| Manufacturers | Fairchild | |
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September 1996
NDT451N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________________________
DD
GDS
GS
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
NDT451N
30
±20
±5.5
±25
3
1.3
1.1
-65 to 150
42
12
© 1997 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
°C/W
NDT451N Rev. C2
|
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Typical Electrical Characteristics (continued)
1.15
I D = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
V = 0V
5 GS
2
1
0.5
0.2
0.1
0.05
TJ = 125°C
25°C
-55°C
0.02
0.01
0.2
0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
2000
1000
500
C iss
C oss
200
100
50
0.1
f = 1 MHz
V GS = 0V
C rss
0.2
0.5 1
2
5 10
V , DRAIN TO SOURCE VOLTAGE (V)
DS
20 30
Figure 9. Capacitance Characteristics.
10
ID = 5.5A
VDS = 10V
8
6
4
2
0
0 4 8 12
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
16
VIN
VGS
RGEN
G
VDD
RL
D
V OUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDT451N Rev. C2
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| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NDT451N.PDF Datasheet ] | |
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