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Número de pieza | NDT014 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Fairchild | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NDT014 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! September 1996
NDT014
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC motor control
and DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
_________________________________________________________________________________________________________
DD
GD S
GS
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDT014
60
±20
±2.7
±10
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT014 Rev. C1
1 page Typical Electrical Characteristics (continued)
1.15
I D = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 V GS = 0V
1
0.5 TJ = 125°C
0.1
0.01
25°C
-55°C
0.001
0.2
0.4 0.6 0.8 1 1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
400
300
200 C iss
100
C oss
50
30 f = 1 MHz
20 VGS = 0V
C rss
10
0.1
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20
50
Figure 9. Capacitance Characteristics.
15
ID = 2.7A
12
V = 10V
DS 20V
40V
9
6
3
0
012345
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
6
VIN
VGS
RGEN
G
VDD
RL
D
V OUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDT014 Rev. C1
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet NDT014.PDF ] |
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