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PDF NDS9953A Data sheet ( Hoja de datos )
| Número de pieza | NDS9953A | |
| Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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NDS9953A
Dual P-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
Features
-2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
________________________________________________________________________________
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
(Note 1c)
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
5
6
7
8
NDS9953A
-30
± 20
± 2.9
± 10
2
1.6
1
0.9
-55 to 150
78
40
© 1997 Fairchild Semiconductor Corporation
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
NDS9953A.SAM
1 page  
Typical Electrical Characteristics (continued)
1.1
1.08
I D = -250µA
1.06
1.04
1.02
1
0.98
0.96
0 . 9 4- 5 0
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 V GS = 0V
1
0.5 TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.2
0.4 0.6 0.8 1 1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
1000
800
500
300
200
C iss
C oss
100
50
0.1
f = 1 MHz
VGS = 0V
0.2
0.5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
C rss
30
Figure 9. Capacitance Characteristics.
10
I D = -2.9A
8
6
VDS = -10V
-20V
-15V
4
2
0
0 2 4 6 8 10
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristic.
12
6
VDS = -15V
5
4
3
TJ = -55°C
25°C
125°C
2
1
0
0 -2 -4 -6 -8 -10
ID , DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS9953A.SAM
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| PDF Descargar | [ Datasheet NDS9953A.PDF ] | |
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