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Fairchild - Dual N & P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence NDS9952A
Description Dual N & P-Channel Enhancement Mode Field Effect Transistor
Fabricant Fairchild 
Logo Fairchild 





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NDS9952A fiche technique
February 1996
NDS9952A
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
notebook computer power management and other
battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
N-Channel 3.7A, 30V, RDS(ON)=0.08@ VGS=10V.
P-Channel -2.9A, -30V, RDS(ON)=0.13@ VGS=-10V.
High density cell design or extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA= 25°C unless otherwise noted
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
30
± 20
± 3.7
± 15
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case (Note 1)
© 1997 Fairchild Semiconductor Corporation
2
1.6
1
0.9
-55 to 150
78
40
P-Channel
-30
± 20
± 2.9
± 10
Units
V
V
A
W
°C
°C/W
°C/W
NDS9952A.SAM

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