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Fairchild - Dual P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence NDS9933A
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Fabricant Fairchild 
Logo Fairchild 





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NDS9933A fiche technique
January 1999
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field ef-
fect transistor is produced using Fairchild’s propri-
etary, high cell density, DMOS technology. This very
high density process is especially tailored to mini-
mize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage
apllications such as DC motor control and DC/
DC conversion where fast switching,low in-line
power loss, and resistance to transients are
needed.
Features
-2.8 A, -20 V. RDS(on) = 0.14 @ VGS = -4.5 V
RDS(on) = 0.19 @ VGS = -2.7 V
RDS(on) = 0.20 @ VGS = -2.5 V.
High density cell design for extremely low RDS(on).
High power and current handling capability in a
widely used surface mount package.
Dual MOSFET in surface mount package.
D2
D2
D1
D1
SO-8
G1
S2
G1
S1
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
NDS9933A
NDS9933A
13’’
©1999 Fairchild Semiconductor Corporation
NDS9933A
-20
±8
-2.8
-10
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape Width
12mm
Quantity
2500 units
NDS9933A Rev. A

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