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PDF NDS9407 Data sheet ( Hoja de datos )
| Número de pieza | NDS9407 | |
| Descripción | Single P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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June 1999
NDS9407
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications
such as notebook computer power management and other
battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
-3.0A, -60V. RDS(ON) = 0.15Ω @ VGS=-10V
RDS(ON) = 0.24Ω @ VGS=-4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
_______________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current - Continuous TA = 25°C
(Note 1a)
- Continuous TA = 70°C
- Pulsed
TA = 25°C
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDS9407
-60
± 20
± 3.0
± 2.4
± 12
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
©1999 Fairchild Semiconductor Corporation
NDS9407.SAM Rev. B
1 page  
Typical Electrical Characteristics (continued)
1.125
1.1
1.075
1.05
1.025
I D = -250µA
1
0.975
0.95
0.925
0.9
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 VGS = 0 V
1
0.5 TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.2
0.4 0.6 0.8
1 1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
1.4
2500
1500
1000
500
C iss
C oss
200
100
50
0.1
f = 1 MHz
V GS = 0 V
C rss
0.2
0.5 1
2
5 10 20
-V DS , DRAIN TO SOURCE VOLTAGE (V)
50
Figure 9. Capacitance Characteristics.
10
IDS = -3A
8
6
V DS = - 1 0 V
-40V
-20V
4
2
0
0 10 20 30
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
40
V IN
VG S
R GEN
G
-V DD
RL
D
V OUT
DUT
S
Figure 11. Switching Test Circuit
t d(on)
ton
tr
90%
t d(off)
t off
tf
90%
VO U T
10%
10%
V IN
10%
50%
90%
50%
PULSE WIDTH
INVERTED
Figure 12. Switching Waveforms
NDS9407.SAM Rev. B
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDS9407.PDF ] | |
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