|
|
PDF NDS8435A Data sheet ( Hoja de datos )
| Número de pieza | NDS8435A | |
| Descripción | Single P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDS8435A (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
March 1997
NDS8435A
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-7.9 A, -30 V. RDS(ON) = 0.023 Ω @ VGS = -10 V
RDS(ON) = 0.035 Ω @ VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDS8435A
-30
±20
-7.9
-25
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS8435A Rev.C1
1 page  
Typical Electrical Characteristics (continued)
1.125
1.1
1.075
ID = -250µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
4000
3000
2000
1000
Ciss
Coss
500
300 f = 1 MHz
VGS = 0 V
Crss
150
0 .1
0 .2
0 .5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
20
VGS = 0V
5
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
10
I D = -7.9A
8
6
V DS = -5V
-15
-10
4
2
0
0 10 20 30 40 50
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDS8435A Rev.C1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDS8435A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDS8435 | Single P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| NDS8435A | Single P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |