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PDF NDS8435 Data sheet ( Hoja de datos )
| Número de pieza | NDS8435 | |
| Descripción | Single P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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May 1996
NDS8435
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-7A, -30V. RDS(ON) = 0.028Ω @ VGS = -10V
RDS(ON) = 0.045Ω @ VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDS8435
-30
-20
-7
-25
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS8435 Rev. B2
1 page  
Typical Electrical Characteristics (continued)
1.1
1.08
I D = -250µA
1.06
1.04
1.02
1
0.98
0.96
0.94
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
20
10
V GS = 0V
5
1 TJ = 125°C
0.5
25°C
-55°C
0.1
0.01
0.001
0.2
0.4 0.6 0.8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
4000
2000
1000
800
C iss
C oss
500
300
200
0.1
f = 1 MHz
VGS = 0V
0.2
0.5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
C rss
30
Figure 9. Capacitance Characteristics.
10
I D = -7.0A
8
6
VDS = -5.0V
-15V
-10V
4
2
0
0 10 20 30 40
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
50
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE W IDTH
INVERTED
Figure 12. Switching Waveforms.
NDS8435 Rev. B2
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDS8435.PDF ] | |
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