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PDF NDS8410 Data sheet ( Hoja de datos )
| Número de pieza | NDS8410 | |
| Descripción | Single N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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February 1996
NDS8410
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
10A, 30V. RDS(ON) = 0.015Ω @ VGS = 10V
RDS(ON) = 0.020Ω @ VGS = 4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDS8410
30
20
± 10
± 50
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS8410 Rev B2
1 page  
Typical Electrical Characteristics (continued)
1.12
I D = 250µA
1.08
1.04
1
0.96
0.92
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
20
10 V GS = 0V
5
1 TJ = 125°C
0.5 25°C
-55°C
0.1
0.01
0.001
0.2
0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
4000
2000
C iss
1000
800
C oss
500
300
200
0.1
f = 1 MHz
VGS = 0V
C rss
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 9. Capacitance Characteristics.
10
ID = 10A
8
6
V DS = 10V
20V
15V
4
2
0
0 10 20 30 40
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
50
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
10%
10%
90%
INVERTED
VIN
10%
50%
50%
PULSE WIDTH
Figure 12. Switching Waveforms.
NDS8410 Rev B2
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NDS8410.PDF ] | |
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