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Fairchild - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence NDP710A
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant Fairchild 
Logo Fairchild 





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NDP710A fiche technique
May 1994
NDP710A / NDP710AE / NDP710B / NDP710BE
NDB710A / NDB710AE / NDB710B / NDB710BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
42 and 40A, 100V. RDS(ON) = 0.038 and 0.042.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP710A NDP710AE
NDB710A NDB710AE
NDP710B NDP710BE
NDB710B NDB710BE
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 M)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
100
100
±20
±40
42 40
168 160
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
150
1
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
Units
V
V
V
V
A
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP710.SAM

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