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PDF NDP7061 Data sheet ( Hoja de datos )
| Número de pieza | NDP7061 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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May 1996
NDP7061 / NDB7061
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
64A, 60V. RDS(ON) = 0.016Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
superior switching performance, and withstand high energy
Rugged internal source-drain diode can eliminate the need
pulses in the avalanche and commutation modes. These
for an external Zener diode transient suppressor.
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
175°C maximum junction temperature rating.
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7061
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
60
60
± 20
± 40
64
190
130
0.87
-65 to 175
275
NDB7061
Units
V
V
V
A
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP7061 Rev. C / NDB7061 Rev. D
1 page  
Typical Electrical Characteristics (continued)
1.15
1.1
I D = 250µA
1.05
1
0.95
0.9
-50
-25
0 25 50 75 100 125 150 175
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature
100
50 VGS = 0V
10
T J = 125°C
1
25°C
-55°C
0.1
0.01
0.001
0.2
0.3 0.5
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
2
5000
4000
3000
2000
1000
Ciss
Coss
500
300
200
0.1
f = 1 MHz
V GS = 0V
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
Crss
20
50
Figure 9. Capacitance Characteristics
20
ID = 64A
15
V DS = 12V 24V
48V
10
5
0
0 20 40 60 80 100
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics
120
VIN
VG S
RGEN
G
VDD
RL
D
VOUT
DUT
S
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDP7061 Rev. C / NDB7061 Rev. D
5 Page 
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NDP7061.PDF ] | |
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