|
|
PDF NDH854P Data sheet ( Hoja de datos )
| Número de pieza | NDH854P | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDH854P (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
May 1997
NDH854P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
SuperSOTTM-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
-5.1 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V
RDS(ON) = 0.052 Ω @ VGS = -4.5V.
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1997 Fairchild Semiconductor Corporation
NDH854P
-30
±20
-5.1
-15
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
NDH854P Rev.D
1 page  
Typical Electrical Characteristics
1.08
1.06
ID = -250µA
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
4000
3000
2000
1000
Ciss
Coss
500
f = 1 MHz
300 VGS = 0 V
Crss
200
0 .1
0 .2
0 .5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
20
1 0 VGS = 0V
1
0 .1
TJ = 125°C
25°C
-55°C
0 .0 1
0 .0 0 1
0 .0 0 0 1
0
0 .2 0 .4 0.6 0 .8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
1 .2
10
I D = -5.1A
8
6
V DS = -5V
-10V
-15V
4
2
0
0 10 20 30 40
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDH854P Rev.D
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NDH854P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDH854P | P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |