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Fairchild - Dual N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence NDH8503N
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricant Fairchild 
Logo Fairchild 





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NDH8503N fiche technique
NDH8503N
Dual N-Channel Enhancement Mode Field Effect Transistor
May 1997
General Description
SuperSOTTM-8 N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management,
and other battery powered circuits where fast switching, and
low in-line power loss are needed in a very small outline surface
mount package.
Features
3.8 A, 30 V. RDS(ON) = 0.033 @ VGS = 10 V
RDS(ON) = 0.05 @ VGS = 4.5 V.
Proprietary SuperSOTTM-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1)
PD Maximum Power Dissipation
(Note 1 )
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
NDH8503N
30
±20
3.8
10.5
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8503N Rev.C

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