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Fairchild - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence NDH832P
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant Fairchild 
Logo Fairchild 





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NDH832P fiche technique
June 1996
NDH832P
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-4.2A, -20V. RDS(ON) = 0.06@ VGS = -4.5V
RDS(ON) = 0.08@ VGS = -2.7V.
High density cell design for extremely low RDS(ON).
Enhanced SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
___________________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDH832P
-20
-8
-4.2
-15
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
NDH832P Rev. B2

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